Equipment
Lab and Coral NameICL / epi-Centura
ModelAMAT Centura 5200
SpecialistGary Riggott    (Eric Lim)
Physical Location39-528
Classification
Process CategoryDeposition
SubcategoryCVD
Material KeywordsSilicon
Sample Size6" Wafers
Alternativenone
Keywordsmulti wafer, load lock, top side of sample, conformal dep, vacuum, plasma, temperature, requires flat
Description
The epi-Centura is an UHV chemical vapor deposition system that grows Si and SiGe epilayers. This tool is not open to public use.

Best for
LimitationsThis tool is not open to public.
Characteristics/FOM
Caution with
Machine Charges (academic rate)32pu/run + 11pu/um
Documents
Process Matrix Details

Permitted


Not Allowed
Ever been in EMLSamples from EML are never permitted to return to ICL or TRL


For more details or help, please consult PTC matrix, email ptc@mtl.mit.edu, or ask the research specialist (Gary Riggott)