Equipment
Lab and Coral NameNANO / Sputter-AJA-ChamberLoad
ModelAJA Orion 5
SpecialistKurt Broderick    (Gary Riggott)
Physical Location8U
Classification
Process CategoryDeposition
SubcategorySputter
Material KeywordsDielectrics, CMOS Metals, Non-CMOS Metals, Non-Standard Materials
Sample Size6" Wafers, 4" Wafers, Pieces
AlternativeTRL / AJA-TRL, NANO / EBeam-AJA
Keywordssingle wafer, manual load, multiple pieces, load lock, top side of sample, conformal dep, vacuum, plasma, manual operation
Description
The AJA sputterer allows for the deposition of a wide variety of metals, dielectrics, and semiconductors. Reactive sputtering with O2 or N2 allows for the deposition of oxides and nitrides of these materials as well. Samples are manually loaded at the bottom of the chamber, face-up, on a rotating stage. Sputtering targets are can be changed by the user. Up to four separate targets can be loaded at a time. Up to two DC and two RF power sources are available. Substrate bias is available for etchback. Substrate heating is also available. Deposition runs of multiple metals is possible in series, without the need for additional pumpdowns or venting. The system also has the ability to ion beam etch samples for basic purposes (it's it is not a dedicated system for IBE; so there's not endpoint, and beam uniformity is not as precise as a dedicated ion beam etching system). While we recommend the EBeam-AJA for most liftoff processes, it's possible to sputter material over photoresist in this system (in contrast with other sputter tools which don't allow photoresists).

Best forConformal film deposition, reactive sputtering
LimitationsDeposition rate can only be measured during dummy run without a sample on the stage.
Characteristics/FOMDC Deposition rate (per target) < 2 A/s, Maximum practical substrate temperature 550C
Caution with
Machine Charges (academic rate)10pu/wafer + 80pu/um**
Documents
Process Matrix Details

Permitted
Been in the ALDSamples that have been in any of the ALD systems
,
Pyrex SubstratesPyrex substrates can be a concern due to high sodium content, which contaminates CMOS frontend tools
,
III-V SubstratesAny III-V substrates, e.g. GaAs, GaN, InP, and so on. Note though that many common III-V substrates will also carry the Au flag, but there are some GREEN III-V substrates.
,
Germanium on surfaceSamples with germanium on the surface (typically grown films)
,
Germanium buriedSamples with germanium buried below a different film
,
PiecesWafer pieces may not be handled by the equipment, and are harder to thoroughly clean - preventing them from running in certain tools.
,
Gold or RED color codeRED color code substrates. These are gold-contaminated or have been processed in gold contaminated tools. Gold and other metals can contaminate silicon devices (GREEN color code) and have to be separated.
(Adds),
Any exposure to CMOS metalIf the sample had ever seen a CMOS metal (or a tool that accepts CMOS metal), then some frontend tools could be contaminated by this.
,
CMOS metal on surfaceCMOS compatible metals exposed on the surface. These are Al,Ni,Pt,Ti,TiN. Other metals such as Au are *NOT* part of this.
,
CMOS metal buriedCMOS compatible metals covered entirely by a different material. These are Al,Ni,Pt,Ti,TiN. Other metals such as Au are *NOT* part of this.
,
Been in the STS DRIEThe DRIE etch leaves behind polymer residues on the sidewall ripples, which can be a contamination concern for some tools.
,
Been in the SEMA sample viewed in the SEM must have used the appropriate chuck to avoid cross-contamination
,
Been in the Concept1The Concep1 deposits dielectrics on GREEN wafers, however it also accepts metal and there can be cross-contamination for diffusion area
,
Has PhotoresistSamples with photoresist cannot be exposed to high temperatures, which is typical in deposition tools. Outgassing can be a concern.
,
Has PolyimidePolyimide is a very chemically resistant polymer, and can tolerate higher temperatures but cannot be exposed to typical PECVD deposition temperatures or diffusion furnaces. Outgassing can be a concern.
,
Has Cured SU8Not fully cured SU8 residues can heavily contaminated plasma chambers or destroy other user's samples, but fully cured SU8 is permitted in certain tools.
,
Coming from KOHAfter a KOH etch, the samples must receive a special clean because the K ions are highly contaminating to CMOS frontend tools
,
Coming from CMPAfter a CMP, the samples must receive a special clean, because the slurry residues otherwise introduce contamination and particles.


Not Allowed
Ever been in EMLSamples from EML are never permitted to return to ICL or TRL


For more details or help, please consult PTC matrix, email ptc@mtl.mit.edu, or ask the research specialist (Kurt Broderick)