Equipment
Lab and Coral NameICL / 4-pt-probe
Model0
SpecialistEric Lim    (Robert Bicchieri)
Physical Location2F 1-South Metrology
Classification
Process CategoryMetrology
SubcategoryElectrical
Material KeywordsCMOS Metals, Non-CMOS Metals
Sample Size6" Wafers
AlternativeTRL / IV-probe
Keywordssingle wafer, manual load, top side of sample, manual operation, alignment
Description
The 4-pt-probe allows for sheet resistance measurements of Si or Ge films or substrates (no metals). Samples are loaded via vacuum wand onto the stage. Manual translational and rotational movements allow measurements at different sample locations.

Best forAnnealed in-situ doped or dopant-implanted Si and Ge films
Limitations
Characteristics/FOM
Caution withProbing current ranges must be adjusted according to the doping level of the film. Thin film measurements require a pn junction below the film to be measured.
Machine Charges (academic rate)2pu/hour
Documents
Process Matrix Details

Permitted


Not Allowed
Ever been in EMLSamples from EML are never permitted to return to ICL or TRL


For more details or help, please consult PTC matrix, email ptc@mtl.mit.edu, or ask the research specialist (Eric Lim)